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1.
在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO2/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO2/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO2/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。 相似文献
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建立了一种细胞趋硬性迁移的理论模型和有限元分析框架,为连续变刚度人工基质的试验设计提供理论依据。考虑了细胞体的黏弹性属性,以及细胞与基质间的配受体动态反应过程,并以配受体合成时间为时间步长,将细胞运动方程化为静力学形式进行求解。对有限元过程提出一种动约束,便于消除其结构矩阵的奇异性。结果表明,模型能够模拟黏着斑内部力的快速波动现象,细胞的运动速度与观测数据一致,可有效模拟20,h以上的长时程问题。 相似文献
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宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga2O3)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。 相似文献
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The rapid transmission of vaccinia virus(VACV)in vivo is thought to be closely related to the cell migration induced by it.Cell migration involved in dynamic changes of cell-substrate adhesion and actin cytoskeleton organization,which can influence by the micro/nano-scale topographic structures that cells are naturally exposed to via contact guidance.However,migration behaviors of VACV-infected cells exposed to topographic cues are still unknown.Herein,we designed an open chip with microgrooved poly(dimethyl siloxane)(PDMS)substrate to explore the topography roles in VACV-induced cell migration.Differed from the random cell migration observed in traditional scratch assay on planar substrate,VACV-infected cells had a tendency to persistently migrate along the axis parallel to microgroove with increased velocity.Moreover,infected cells exhibited a dominant elongated protrusion aligned to the micro-grating axis compare to the shorter lamella extended in any direction on smooth substrate.Interestingly,the Golgi complex preferred to relocate behind the nucleus confined within the micro-grating axis in majority of infected migratory cells.The directional polarization of cells embodied in protrusion formation and Golgi reorientation was responsible for the directionally persistent migration behaviors induced by VACV on microgrooved substrate.Infected cells response to substrate topography,causing the actin-filled stretched protrusion containing numerous virions and accelerated movement is likely to facilitate direct and rapid spread of VACV.This work opens a window for us to understand the migration behaviors of infected cells in vivo,and also provides a cue for revealing the relationship between virus-induced cell migration and virus rapid spread. 相似文献
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《Arabian Journal of Chemistry》2020,13(2):3934-3945
A hierarchical nanostructure consisting of uniform copper oxide nanowires vertically grown on three-dimensional copper framework (CuO NWs/3D-Cu foam) was prepared by a two-step synthetic process. The uniform CuO NWs anchored onto the 3D foam exhibited outstanding electrocatalytic activity towards hydrogen peroxide reduction due to the unique one‐dimensional direction with its excellent catalytic activity and large surface area of 3D substrate, which enhanced electroactive sites and charge conductivity. As a result, a wide linear detection range of 1 µM–1 mM, good sensitivity of 8.87 µA/(mM ⋅ cm2), low detection limit of 0.98 µM, and rapid response time of 5 s to hydrogen peroxide were achieved under a working potential of −0.4 V in phosphate buffer solution (pH of 7.4). In addition, the CuO NWs/3D-Cu foam material showed excellent selectivity to hydrogen peroxide and good resistance against poisonous interferents, including ascorbic acid, dopamine, urea, uric acid, and potassium chloride. Furthermore, the CuO NWs/3D-Cu foam presented good reproducibility, stability, and accurate detection for hydrogen peroxide in real sample; therefore, it may be considered to be a potential free-standing hydrogen peroxide sensor in practical analysis applications. 相似文献
7.
碲镉汞(MCT)自从问世以来一直是高端红外(IR)探测器领域的首选材料,分子束外延碲镉汞技术具有低成本异质外延、材料能带精准调控、原位成结等优势,是第三代红外焦平面陈列(FPA)器件研制的重要手段。本文报道了昆明物理研究所分子束外延(MBE)MCT薄膜技术进展,包括材料结构、晶体质量、表面缺陷、材料均匀性、掺杂浓度等参数优化控制的研究结果。异质衬底、碲锌镉衬底上MCT薄膜尺寸分别为4英寸(10.16 cm)及2.5 cm×2.5 cm,材料EPD值分别在1×106 cm-2附近及(3~30)×104 cm-2范围,表面宏观缺陷密度分别在30 cm-2附近及100~300 cm-2范围,薄膜质量与国内外先进水平相当。采用分子束外延MCT薄膜实现了2 048×2 048中波红外(MWIR)、2 048×2 048短波甚高分辨率红外(SWIR)焦平面、640×512中短双色红外(S-MWIR)、320×256中中双色红外(M-MWIR)FPA探测器的研制和验证。 相似文献
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Alena A. Nastulyavichus Irina N. Saraeva Andrey A. Rudenko Roman A. Khmelnitskii Alexander L. Shakhmin Demid A. Kirilenko Pavel N. Brunkov Nikolay N. Melnik Nikita A. Smirnov Andrey A. Ionin Sergey I. Kudryashov 《Particle & Particle Systems Characterization》2020,37(5):2000010
Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near−mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphor-dopant concentration ≈1015 cm−3), with the corresponding extinction coefficient for the hyperdoped NPs being 4–7 orders higher over the broadband spectral range of 1–25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV−mid-IR) spectral response. 相似文献
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